Microstructure of laterally overgrown GaN layers

Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si „111) substrates

Optical Characterization of Lateral Epitaxial Overgrown GaN Layers

The optical properties of homoepitaxial GaN layers deposited by organometallic vapor phase epitaxy on stripe-patterned GaN films on 6H-SiC substrates have been investigated. Analysis of the spatiallyresolved Raman scattering spectra indicate an improvement in material quality of the overgrown region. Room-temperature color cathodoluminescence imaging and low-temperature photoluminescence measur...

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Transmission electron microscopy techniques are applied to investigate three-dimensional (3D) microstructures of the GaN nonplanar substrate selectively grown by metalorganic chemical vapor deposition. Two-step lateral epitaxial overgrowth (LEO) has been utilized and optimized to fabricate fully coalesced nonplanar mesa substrate templates with the trapezoidal cross-section. All threading dislo...

ROOM TEMPERATURE LASER ACTION IN LATERALLY OVERGROWN GaN PYRAMIDS ON (111) SILICON

Single and multi-mode room temperature laser action was observed in GaN pyramids under strong optical pumping. The 5and 15-micron-wide hexagonal-based pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. The pyramids were individually pumped, imaged, and spectrally analyzed through a high magnificat...

Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers

Synchrotron x-ray back reflection section topographs of epitaxial lateral overgrown ~ELO! GaAs samples grown on ~001! GaAs substrates show images of the GaAs layers bent due to the interaction between the layer and the SiO2 mask. The topographs are simulated under the assumption of orientational contrast. Using the same data the measured x-ray diffraction curve is simulated. The calculations, w...